L. Rubin

Phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ

L. Rubin, T. P. Orlando, J. B. Vander Sande et al. · Applied Physics Letters · 1992 · 72 citations

Natural Sciences, Chemistry, Materials Science +15

Diffusion of ion implanted boron in preamorphized silicon

K. S. Jones, L. H. Zhang, V. Krishnamoorthy et al. · Applied Physics Letters · 1996 · 51 citations

Engineering, Materials Engineering, Materials Science +16

Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantation

K. S. Jones, K. Möller, Jianjun Chen et al. · Journal of Applied Physics · 1997 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon

L. S. Robertson, K. S. Jones, L. Rubin et al. · Journal of Applied Physics · 2000 · 37 citations

Engineering, Materials Engineering, Materials Science +17

The effect of boron implant energy on transient enhanced diffusion in silicon

J. Liu, V. Krishnamoorthy, H.-J.L. Gossman et al. · Journal of Applied Physics · 1997 · 33 citations

Engineering, Materials Engineering, Materials Science +17