Diffusion During Annealing is a thin film diffusion phenomenon characterized by the thermally activated migration of atoms or defects within a thin film structure during a post-deposition heat treatment process, distinguished from other diffusion mechanisms by its dependence on annealing-induced thermal energy and time-dependent kinetics.
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Philips (Netherlands)
Amsterdam, The Netherlands
13 h-index
48 publications
2.3K citations
Tokyo Institute of Technology
Tokyo, Japan
12 h-index
34 publications
1.5K citations
Stanford University
Stanford, United States
11 h-index
30 publications
1.2K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
11 h-index
23 publications
961 citations
Centre National de la Recherche Scientifique
Paris, France
11 h-index
41 publications
846 citations
IMEC
Leuven, Belgium
10 h-index
43 publications
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The University of Texas at Austin
Austin, United States
10 h-index
36 publications
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Keio University
Tokyo, Japan
9 h-index
23 publications
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- Applied Physics Letters
97 publications · 4.5K citations
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99 publications · 3.6K citations
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JES · 27 publications · 1.2K citations
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- Japanese Journal of Applied Physics
JJAP · 24 publications · 452 citations
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- Physical review. B, Condensed matter
PRB · 12 publications · 467 citations
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