Growth and characterization of low defect GaN by hydride vapor phase epitaxy

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.7K citations

White Oled, Electrical Engineering, Electronic Devices +14

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 528 citations

Materials Science, Luminescence Intensity, Wide-bandgap Semiconductor +15

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Michael K. Kelly, R. P. Vaudo, V. M. Phanse et al. · Japanese Journal of Applied Physics · 1999 · 309 citations · Full text

Laser-induced Liftoff, Wide-bandgap Semiconductor, Electrical Engineering +9