Electrical properties of deposited ZrO₂films on ZnO/n-Si substrates

Abstract

The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance–voltage (C–V), conductance–voltage (G–V) and current–voltage (I–V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO2/n-Si have been measured. The fixed oxide charge density (Qf/q) and interface state density (Dit) are found to be 3.3 × 1011 cm−2 and 1.3 × 1012 cm−2 eV−1, respectively. Charge trapping behaviour has also been studied under Fowler–Nordheim (FN) constant current stressing.