Concepedia

Fixed Oxide Charge

Fixed Oxide Charge is a type of immobile electric charge located at the interface between the silicon and silicon dioxide layers in a MOS capacitor, arising from excess silicon ions in the oxide lattice, which influences the threshold voltage by creating a fixed electrostatic field.

178

Publications

6.6K

Citations

611

Authors

196

Institutions

Publications per year

2017–2026

11

Variants

Fixed Oxide Charges

Parents

Publications

178

Mechanism of negative-bias-temperature instability

C. E. Blat, E. H. Nicollian, Edward H. Poindexter · Journal of Applied Physics · 1991 · 242 citations

, , +17

Radiation-Induced Defects in SiO2 as Determined with XPS

F. J. Grunthaner, P. J. Grunthaner, J. Maserjian · IEEE Transactions on Nuclear Science · 1982 · 211 citations

, , +17

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

F. J. Feigl, Donald R. Young, D. J. DiMaria et al. · Journal of Applied Physics · 1981 · 205 citations

, , +16

Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging

Shigeo Ogawa, Masakazu Shimaya, Noboru Shiono · Journal of Applied Physics · 1995 · 198 citations

, , +17

Behavior of hydrogen in high dielectric constant oxide gate insulators

P. W. Peacock, John Robertson · Applied Physics Letters · 2003 · 196 citations

, , +17

1–5 of 178

Authors

611

  1. PC
    Paul C. McIntyre

    Stanford University, United States

    6 publications · 240 citations

    6

    h-index

  2. PK
    Paul K. Hurley

    University College Cork, Ireland

    4 publications · 163 citations

    5

    h-index

  3. RA
    R. A. B. Devine

    Orange (France), France

    5 publications · 199 citations

    5

    h-index

  4. DW
    Dennis W. Hess

    Georgia Institute of Technology, United States

    4 publications · 68 citations

    4

    h-index

  5. KC
    K. Cherkaoui

    University College Cork, Ireland

    3 publications · 108 citations

    4

    h-index

1–5 of 611

Institutions

196

  1. Stanford University

    Stanford, United States

    9 h-index

    25 publications

    1.1K citations

  2. IBM (United States)

    Armonk, United States

    8 h-index

    18 publications

    398 citations

  3. North Carolina State University

    Raleigh, United States

    5 h-index

    17 publications

    763 citations

  4. University College Cork

    Cork, Ireland

    5 h-index

    18 publications

    756 citations

  5. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    4 h-index

    7 publications

    312 citations

  6. University of North Carolina at Chapel Hill

    Chapel Hill, United States

    4 h-index

    10 publications

    348 citations

  7. Sandia National Laboratories

    Albuquerque, United States

    4 h-index

    25 publications

    1.3K citations

  8. Texas Instruments (United States)

    Dallas, United States

    4 h-index

    6 publications

    109 citations

1–8 of 196

Venues

  1. Journal of Applied Physics

    32 publications · 1.5K citations

    20

    h-index

  2. Applied Physics Letters

    20 publications · 955 citations

    16

    h-index

  3. Journal of The Electrochemical Society

    JES · 21 publications · 715 citations

    16

    h-index

  4. IEEE Electron Device Letters

    12 publications · 384 citations

    12

    h-index

  5. IEEE Transactions on Nuclear Science

    10 publications · 523 citations

    10

    h-index

1–5