Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characterization of GaN p-n junctions with and without threading dislocations

P. Kozodoy, J. P. Ibbetson, H. Marchand et al. · Applied Physics Letters · 1998 · 357 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations

Engineering, Materials Engineering, Materials Science +15

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

H. Marchand, Xuefei Wu, J. P. Ibbetson et al. · Applied Physics Letters · 1998 · 235 citations

Engineering, Materials Engineering, Materials Science +17

Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

Hiromitsu Asai · Journal of Crystal Growth · 1987 · 194 citations

Engineering, Materials Engineering, Materials Science +14