Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Jaap van den Berg, D.G. Armour, S. Zhang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 55 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Errors in near-surface and interfacial profiling of boron and arsenic

W. Vandervorst, Tom Janssens, Bert Brijs et al. · Applied Surface Science · 2004 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +6

A systematic study of the surface roughening and sputter rate variations occurring during SIMS ultrashallow depth profile analysis of Si with Cs+

P.A.W. van der Heide, Min Soo Lim, Scott S. Perry et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +17

Damage accumulation and dopant migration during shallow As and Sb implantation into Si

M. Werner, D.G. Armour, W VANDERVORST et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 21 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +12

Ultra-low energy SIMS analysis of boron deltas in silicon

Nicolas Baboux, J.C. Dupuy, G. Prudon et al. · Journal of Crystal Growth · 2002 · 20 citations

Engineering, Materials Engineering, Materials Science +7