W. Vandervorst

Characterization of a point-contact on silicon using force microscopy-supported resistance measurements

Peter Wolf, J. Snauwaert, Trudo Clarysse et al. · Applied Physics Letters · 1995 · 112 citations

Engineering, Microscopy, Mechanical Engineering +19

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Bartek Pawlak, R. Surdeanu, B. Colombeau et al. · Applied Physics Letters · 2004 · 104 citations

Engineering, Ge Preamorphization, Boron Deactivation +16

Diffusion, activation, and regrowth behavior of high dose P implants in Ge

A. Satta, Eddy Simoen, Ray Duffy et al. · Applied Physics Letters · 2006 · 94 citations

Semiconductors, Materials Science, Electrical Engineering +13

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

K. De Keyser, C. Van Bockstael, R.L. Van Meirhaeghe et al. · Applied Physics Letters · 2010 · 83 citations · Full text

Materials Science, Semiconductors, Electronic Devices +15

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

B. J. Pawlak, T. Janssens, Bert Brijs et al. · Applied Physics Letters · 2006 · 63 citations

Engineering, Silicon On Insulator, Carbon Co-doping +16