Characterization of a point-contact on silicon using force microscopy-supported resistance measurements

Peter Wolf, J. Snauwaert, Trudo Clarysse, +2

Applied Physics Letters

EngineeringMicroscopyMechanical EngineeringCharge CarriersSilicon On Insulator +17

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Bartek Pawlak, R. Surdeanu, B. Colombeau, +7

Applied Physics Letters

EngineeringGe PreamorphizationBoron DeactivationBoron NitrideNanoelectronics +14

Diffusion, activation, and regrowth behavior of high dose P implants in Ge

A. Satta, Eddy Simoen, Ray Duffy, +5

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringIon ImplantationEngineering +11

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

K. De Keyser, C. Van Bockstael, R.L. Van Meirhaeghe, +6

Applied Physics Letters

Materials ScienceSemiconductorsElectronic DevicesEngineeringElectronic Materials +13

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

B. J. Pawlak, T. Janssens, Bert Brijs, +4

Applied Physics Letters

EngineeringSilicon On InsulatorCarbon Co-dopingSemiconductor DeviceSemiconductors +14

Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

David Álvarez, J. Hartwich, Marc Fouchier, +2

Applied Physics Letters

EngineeringMicroscopyIntegrated CircuitsSilicon On InsulatorMicroscopy Method +16

Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

Tom Janssens, Cedric Huyghebaert, Danielle Vanhaeren, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringRadiation EffectRadiation ExposureProfile DistortionsIon Beam Instrumentation +17

Progress towards a physical contact model for scanning spreading resistance microscopy

Pierre Eyben, S Denis, Trudo Clarysse, +1

Materials Science and Engineering B

EngineeringPhysicsMicrofabricationMicroscopyMechanics +10

Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips

Peter Wolf, J. Snauwaert, L. Hellemans, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Atomic Force MicroscopyEngineeringMicroscopySemiconductorsVertical Dopant Profiling +17

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Umberto Celano, Guido Giammaria, L. Goux, +3

Nanoscale