T. Janssens

Ion-implantation issues in the formation of shallow junctions in germanium

Eddy Simoen, A. Satta, A. D’Amore et al. · Materials Science in Semiconductor Processing · 2006 · 112 citations

Ion Implantation, Physics, Applied Physics +3

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

B. J. Pawlak, T. Janssens, Bert Brijs et al. · Applied Physics Letters · 2006 · 63 citations

Engineering, Silicon On Insulator, Carbon Co-doping +16

Suppression of phosphorus diffusion by carbon co-implantation

B. J. Pawlak, Ray Duffy, T. Janssens et al. · Applied Physics Letters · 2006 · 56 citations

Engineering, P Junctions, Integrated Circuits +18

Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies

Pierre Eyben, T. Janssens, Wilfried Vandervorst · Materials Science and Engineering B · 2005 · 54 citations

Electrical Engineering, Ultra-shallow Junction Characterization, Engineering +8

Simulation of the Anneal of Ion Implanted Boron Emitters and the Impact on the Saturation Current Density

A. Florakis, T. Janssens, Eveline Rosseel et al. · Energy Procedia · 2012 · 13 citations · Full text

Engineering, Emitter Formation, Saturation Current Density +16