Concepedia

Damage accumulation and dopant migration during shallow As and Sb implantation into Si

M. Werner, D.G. Armour, W VANDERVORST, E. J. H. Collart, R.G. Goldberg, Paul Bailey, T.C.Q. Noakes

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 21 citations · 12 references

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12

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

, , +16

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

, , +17

Crystalline to amorphous transformation in ion-implanted silicon: a composite model

John R. Dennis, Edward B. Hale · Journal of Applied Physics · 1978 · 281 citations

, , +17

Displacement criterion for amorphization of silicon during ion implantation

L. A. Christel, J. F. Gibbons, T. W. Sigmon · Journal of Applied Physics · 1981 · 126 citations

, , +17

Amorphization of silicon by elevated temperature ion irradiation

R. D. Goldberg, J. S. Williams, R. G. Elliman · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 89 citations

, , +12