Electronics Letters · 2002 · 20 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCharge Carrier DensityElectron MobilityGallium NitrideGallium Nitride (Gan) MaterialsHeterostructure DevicesHigh-electron-mobility TransistorsMolecular Beam EpitaxyTransconductance
Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH3). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility are obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show ft of 17 GHz and fmax of 40 GHz.
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A.Y. Cho, John R. Arthur · Progress in Solid State Chemistry · 1975 · 1.2K citations
GaN MESFETs on (111) Si substrate grown by MOCVD
Takashi Egawa, Naoyuki Nakada, Hiroyasu Ishikawa et al. · Electronics Letters · 2000 · 39 citations