A. Schremer

AlGaN/GaN high electron mobility transistors on Si(111) substrates

Eduardo M. Chumbes, J. R. Shealy, A. Schremer et al. · IEEE Transactions on Electron Devices · 2001 · 116 citations

Parasitic Substrate, Wide-bandgap Semiconductor, Electrical Engineering +12

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

J. Smart, A. Schremer, Nils Weimann et al. · Applied Physics Letters · 1999 · 85 citations · Full text

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +12

Bistability in two-mode semiconductor lasers via gain saturation

C. L. Tang, A. Schremer, T. Fujita · Applied Physics Letters · 1987 · 80 citations

Photonics, Engineering, Laser Science +10

High electron mobility AlGaN/GaN heterostructure on (111) Si

A. Schremer, J. Smart, Y. Wang et al. · Applied Physics Letters · 2000 · 73 citations

Materials Science, Aluminium Nitride, Electrical Engineering +12

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

S. Kaiser, Michael Jakob, J. Zweck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 59 citations

Semiconductors, Materials Science, Electrical Engineering +15