Development of chemical beam epitaxy for the deposition of gallium nitride

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Japanese Journal of Applied Physics · 1993 · 584 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon

Ting Lei, T. D. Moustakas, R. J. Graham et al. · Journal of Applied Physics · 1992 · 354 citations

Engineering, Materials Engineering, Materials Science +17

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Engineering, Materials Engineering, Materials Science +16

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17