2008 · 18 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ScalingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesChannel Length ScalingOperating ConditionsSchottky Barrier CharacteristicsSubthreshold ConductionSubthreshold OperationSubthreshold SwingSubthreshold Swing AnalysisTransconductance
A systematic study of InGaAs metallic source/drain Schottky barrier (SB) FET is conducted from a structural and material perspective by comparing it with InGaAs MOSFET and Si SBFET counterparts. The InGaAs SBFET exhibits a superior subthreshold swing compared to its Si counterpart due to its smaller transport mass. The contrary occurs at smaller channel length, demonstrating that InGaAs SBFETs are not as scalable. Since these devices exhibit different subthreshold and transconductance properties, their relative device advantage depends on the operating condition. We demonstrate that there is a window where the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> of an InGaAs SBFET can outperform its InGaAs MOSFET and Si SBFET counterparts.
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