P.D. Ye

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

Yi Xuan, Yanqing Wu, P.D. Ye · IEEE Electron Device Letters · 2008 · 298 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

Yi Xuan, Hung-Chun Lin, P.D. Ye · IEEE Transactions on Electron Devices · 2007 · 111 citations

Semiconductors, Oxide Heterostructures, Materials Science +14

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

Yanqing Wu, W. K. Wang, O. Koybasi et al. · IEEE Electron Device Letters · 2009 · 93 citations · Full text

Deep-submicrometer Inversion-mode, Engineering, Physics +8

High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and HfAlO as gate dielectrics

Yi Xuan, Yanqing Wu, Tian Shen et al. · 2007 · 89 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +14

Metal contacts to MoS<inf>2</inf>: A two-dimensional semiconductor

Adam T. Neal, Han Liu, Jiangjiang Gu et al. · 2012 · 53 citations

Engineering, Two-dimensional Materials, Optoelectronic Devices +19