Himadri S. Pal

Influence of Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs MOSFETs

Himadri S. Pal, Kurtis D. Cantley, Shaikh Ahmed et al. · IEEE Transactions on Electron Devices · 2008 · 46 citations

Device Modeling, Electrical Engineering, Engineering +8

Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET

Kurtis D. Cantley, Yang Liu, Himadri S. Pal et al. · 2007 · 28 citations

Engineering, Integrated Circuits, Effective Mass Values +16

NEGF analysis of InGaAs Schottky barrier double gate MOSFETs

Himadri S. Pal, Tony Low, Mark Lundstrom · 2008 · 18 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate

Tao Yang, Y. Liu, P. D. Ye et al. · Applied Physics Letters · 2008 · 14 citations · Full text

Materials Science, Electrical Engineering, Metal Gate +14

Scattering in NEGF: Made simple

Dmitri E. Nikonov, Himadri S. Pal, George I. Bourianoff · 2009 · 13 citations

Microscopy, Wave Scattering, Light Scattering +3