Applied Physics Letters · 2003 · 57 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionChemical Vapor DepositionMemory DevicesQuantum DotsSemiconductor NanomaterialsSemiconductor PhysicsAluminaCharge StorageData RetentionLow-pressure Chemical Vapor DepositionNanocrystalsNanoelectronic Memory DevicesSemiconductor Quantum DotsSilicon Nanocrystals
We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm−2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.
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Room-temperature single-electron memory
Kazuo Yano, T. Ishii, T. Hashimoto et al. · IEEE Transactions on Electron Devices · 1994 · 434 citations
Engineering, Computer Engineering, Electrical Engineering +15