1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T518, We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and $\hbox{ZrO}_{2}$ gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. $\hbox{ZrO}_{2}$ is one of the most promising high- $k$ materials. The a-IGZO TFT (channel $W/L = \hbox{240/30}\ {\rm\mu}\hbox{m}$) with $\hbox{ZrO}_{2}$ shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 $\hbox{cm}^{2}/(\hbox{V}\cdot\hbox{s})$ at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches. 1e:T4af,In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm ² / Vmiddots, and large I _on / I _off ratio of 5 times 10 ⁷ . These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.1f:T5a3,

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