High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and <formula formulatype="inline"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. <formula formulatype="inline"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> is one of the most promising high- <formula formulatype="inline"><tex Notation="TeX">$k$</tex></formula> materials. The a-IGZO TFT (channel <formula formulatype="inline"><tex Notation="TeX">$W/L = \hbox{240/30}\ {\rm\mu}\hbox{m}$</tex></formula>) with <formula formulatype="inline"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> shows high performance such as high <emphasis emphasistype="smcaps">on</emphasis> current of 2.11 mA and high field effect mobility of 28 <formula formulatype="inline"><tex Notation="TeX">$\hbox{cm}^{2}/(\hbox{V}\cdot\hbox{s})$</tex></formula> at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches. </para>