Fa‐Hsyang Chen

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

Fa‐Hsyang Chen, Jim-Long Her, Yu-Hsuan Shao et al. · Nanoscale Research Letters · 2013 · 62 citations · Full text

Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors

Fa‐Hsyang Chen, Jim-Long Her, Somnath Mondal et al. · Applied Physics Letters · 2013 · 45 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Fa‐Hsyang Chen, Tung-Ming Pan, Ching-Hung Chen et al. · IEEE Electron Device Letters · 2013 · 43 citations

Semiconductor Technology, Electrical Engineering, Thin-film Transistor +13

Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

Fa‐Hsyang Chen, Meng-Ning Hung, Jui‐Fu Yang et al. · Journal of Physics and Chemistry of Solids · 2012 · 43 citations

Materials Science, Electrical Characteristics, Electrical Engineering +10

Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Somnath Mondal, Jim-Long Her, Fa‐Hsyang Chen et al. · IEEE Electron Device Letters · 2012 · 24 citations

Semiconductors, Materials Science, Electrical Engineering +12