IEEE Electron Device Letters · 2003 · 24 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesElectrical PropertiesEquivalent Oxide ThicknessFlatband VoltageMetal Gate ElectrodesMetal GatesOxide Thickness MeasurementSilicon NitrideThermal Stability
In this letter, the effect of silicon and nitrogen on the electrical properties of TaSi/sub x/N/sub y/ gate electrode were investigated. The TaSi/sub x/N/sub y/ films were deposited on SiO/sub 2/ using reactive cosputtering of Ta and Si target in Ar and N/sub 2/ ambient. The thermal stability of TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks was evaluated by measuring the flatband voltage and equivalent oxide thickness at 400/spl deg/C and 900/spl deg/C in Ar. It was found that under high temperature anneals, Si-rich TaSi/sub x/N/sub y/ films increased and this was attributed to the formation of a reaction layer at the electrode-dielectric interface. Reducing the Si content alone did not prevent the formation of this reaction layer while removing Si completely by utilizing TaN resulted in work functions that were too high. The presence of both Si and N was deemed necessary and their content was critical in obtaining optimized TaSi/sub x/N/sub y/ gates that are suitable for NMOS devices.
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Robust ternary metal gate electrodes for dual gate CMOS devices
Dae-Gyu Park, Tae-Ho Cha, Kwan-Yong Lim et al. · 2002 · 64 citations