Ternary amorphous metallic thin films as diffusion barriers for Cu metallization

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

E. Kolawa, Jen‐Sue Chen, J.S. Reid et al. · Journal of Applied Physics · 1991 · 222 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition

Shizhi Li, Yulong Shi, Hongrui Peng · Plasma Chemistry and Plasma Processing · 1992 · 211 citations

Materials Science, Engineering, Applied Physics +4

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations

J.S. Reid, E. Kolawa, R. Ruiz et al. · Thin Solid Films · 1993 · 164 citations

Ti-Si-N diffusion barriers between silicon and copper

J.S. Reid, Xin Sun, E. Kolawa et al. · IEEE Electron Device Letters · 1994 · 81 citations

Semiconductors, Materials Science, Engineering +15

Amorphous Ta–Si–N thin-film alloys as diffusion barrier in Al/Si metallizations

E. Kolawa, J. M. Molarius, C. W. Nieh et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 76 citations

Materials Science, Materials Engineering, Rf Reactive Sputtering +13