Basic III–V nitride research – past, present and future

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1996 · 1.2K citations

Engineering, Electrical Engineering, Materials Science +17

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 866 citations

Engineering, Materials Science, Physics +17

Fundamental energy gap of GaN from photoluminescence excitation spectra

B. Ḿonemar · Physical review. B, Solid state · 1974 · 797 citations

Natural Sciences, Materials Engineering, Materials Science +17