Bo Monemar

Homoepitaxial growth of β-Ga₂O₃layers by halide vapor phase epitaxy

Hisashi Murakami, Kazushiro Nomura, Ken Goto et al. · Applied Physics Express · 2014 · 402 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy

Masataka Higashiwaki, Keita Konishi, Kohei Sasaki et al. · Applied Physics Letters · 2016 · 342 citations

Engineering, Electrical Engineering, Materials Science +17

Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Ken Goto, Keita Konishi, Hisashi Murakami et al. · Thin Solid Films · 2018 · 220 citations

Engineering, Materials Engineering, Materials Science +14

Spatially resolved Hall effect measurement in a single semiconductor nanowire

Kristian Storm, Filip Halvardsson, Magnus Heurlin et al. · Nature Nanotechnology · 2012 · 180 citations · Full text

Natural Sciences, Electrical Engineering, Physics +14

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Sean Knight, A. Mock, Rafał Korlacki et al. · Applied Physics Letters · 2018 · 58 citations · Full text

Natural Sciences, Materials Science, Physics +17