Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate - Concepedia

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Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

23

Citations

12

References

2003

Year

Mengyuan Wu, B.S. Zhang, J. Chen, J.P. Liu, Xinyu Shen, Degang Zhao, Juchen Zhang, Jiancheng Wang, Nan Li, R. Q. Jin,

Journal of Crystal Growth

Materials ScienceAluminium NitrideAln BufferGan Film GrownEngineeringWide-bandgap SemiconductorSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceCrystal Properties

References

	Year	Citations

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