R. Q. Jin

Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

J. C. Zhang, Desheng Jiang, Qian Sun et al. · Applied Physics Letters · 2005 · 62 citations

Ii-vi Semiconductor, Photonics, Photoluminescence +10

Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer

Qian Sun, Yong Huang, Hongmei Wang et al. · Applied Physics Letters · 2005 · 34 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

Mengyuan Wu, B.S. Zhang, J. Chen et al. · Journal of Crystal Growth · 2003 · 23 citations

Materials Science, Aluminium Nitride, Aln Buffer +8

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

R. Q. Jin, Jianzhong Liu, Junwei Zhang et al. · Journal of Crystal Growth · 2004 · 22 citations

Materials Science, Aluminium Nitride, Engineering +7

On the size-dependent fatigue behaviour of laser powder bed fusion Ti-6Al-4V

Jieming S. Zhang, Yuanbo T. Tang, R. Q. Jin et al. · Additive manufacturing · 2023 · 17 citations · Full text