Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

AlGaN/GaN quantum well ultraviolet light emitting diodes

Jung Han, Mary H. Crawford, R. J. Shul et al. · Applied Physics Letters · 1998 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17

Energy band-gap bowing parameter in an Al<i>x</i>Ga1−<i>x</i> N alloy

Yasuo Koide, H. Itoh, Mohammad Rezaul Huque Khan et al. · Journal of Applied Physics · 1987 · 205 citations

Natural Sciences, Materials Science, Physics +17

Stress and Defect Control in GaN Using Low Temperature Interlayers

Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima et al. · Japanese Journal of Applied Physics · 1998 · 165 citations

Engineering, Materials Engineering, Materials Science +17

Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

Jung Han, Karen Elizabeth Waldrip, S. R. Lee et al. · Applied Physics Letters · 2001 · 130 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 129 citations

Engineering, Materials Engineering, Materials Science +17