Decomposition of interfacial SiO2 during HfO2 deposition

Abstract

Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An examination of the temperature dependence suggests that oxygen vacancy reactions are responsible.

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