Concepedia

High-temperature behavior of SiC power diodes

Cyril Buttay, Christophe Raynaud, Hervé Morel, Mihai Lazar, Gabriel Civrac, Dominique Bergogne

HAL (Le Centre pour la Communication Scientifique Directe) · 2011 · 11 citations · 9 references

Concepts

Abstract

International audience

References

9

Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

Christophe Raynaud, Dominique Tournier, Hervé Morel et al. · Diamond and Related Materials · 2009 · 103 citations · Full text

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Maximum Junction Temperatures of SiC Power Devices

Kuang Sheng · IEEE Transactions on Electron Devices · 2009 · 101 citations

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Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements

Christophe Raynaud, Karine Isoird, M. Lazar et al. · Journal of Applied Physics · 2002 · 58 citations

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A high-temperature multichip power module (MCPM) inverter utilizing silicon carbide (SiC) and silicon on insulator (SOI) electronics

Jared Homberger, Edgar Cilio, R.M. Schupbach et al. · 2006 · 41 citations

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Junction temperature dynamics of power MOSFET and SiC diode

Sung Gyu Pyo, Kuang Sheng · 2009 · 30 citations

, , +16