2009 · 30 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationHeat ConductionSemiconductor PhysicsThermal Properties Of SemiconductorsCurrentsElectrothermal SimulationHigh-temperature Device OperationPower Electronics DevicesSilicon Carbide (Sic) MaterialsSilicon Carbide Power ElectronicsSteady-state CurrentThermal Management Of Semiconductor Devices
Si power devices rarely exceed 190 °C, but this limitation hampers exploration of SiC devices’ intrinsic high‑temperature capability. In this paper, junction temperature behavior of Si power MOSFETs and SiC diodes under significant current is investigated by experiment and theoretical analysis. Dynamic variation and steady‑state values of device junction temperatures at different currents are studied, and system design approaches to alleviate these limitations for SiC devices are discussed and recommended. The steady‑state junction temperature versus current curves rise sharply after ~100 °C for the MOSFET and ~150 °C for the SiC diode, reaching maximum steady‑state temperatures of ~190 °C and ~220 °C, respectively, and the experimental results agree well with PSpice thermal circuit simulation and analytical calculations.
In this paper, junction temperature behavior of Si power MOSFET and SiC diodes when conducting significant current is investigated in detail by experiment and theoretical analysis. The dynamic variation and steady-state values of device junction temperatures when carrying different currents are studied. The results show that the device steady-state junction temperature versus current curve rises sharply after around 100°C and 150°C, for the Si power MOSFET and SiC diode, respectively. Maximum obtainable steady-state junction temperatures are found to be around 190°C for the MOSFET and 220°C for the SiC diode. The experimental results are well-matched by PSpice equivalent thermal circuit simulation and theoretical analytical calculation. While such limitation does not present as an issue for Si Power devices (as they are generally not expected to operate above 190°C), it could limit one's ability in exploring the intrinsic very high temperature capability of SiC power devices. System design approaches that can alleviate these limitations for the SiC power device are discussed and recommended.
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