David J. Spry

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Philip G. Neudeck, David J. Spry, Liang-Yü Chen et al. · IEEE Electron Device Letters · 2017 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

Extreme temperature 6H‐SiC JFET integrated circuit technology

Philip G. Neudeck, S.L. Garverick, David J. Spry et al. · physica status solidi (a) · 2009 · 138 citations

Engineering, Aerospace Engineering, Electrical Engineering +17

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

Philip G. Neudeck, David J. Spry, Liang-Yü Chen et al. · IEEE Electron Device Letters · 2008 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Philip G. Neudeck, Liangyu Chen, Roger D. Meredith et al. · IEEE Journal of the Electron Devices Society · 2018 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 °C

Robert S. Okojie, Dorothy Lukco, Yuanliang L. Chen et al. · Journal of Applied Physics · 2002 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +17