IEEE Transactions on Components Hybrids and Manufacturing Technology · 1993 · 21 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesBipolar Junction TransistorsDevice CharacterizationTemperature MeasurementTemperature RegulationWide-bandgap Semiconductor DevicesAmbient Operating Room TemperatureAmbient Temperature EffectsHigh-temperature Device OperationHigh-temperature ElectronicsMilitary ElectronicsOperating Room Ambient TemperaturePower Electronics DevicesPower Mosfets
There is a growing need for commercial and military power electronics to operate above 175 degrees C. Changes in operating parameters at 200 degrees C have been measured for four devices, an NPN bipolar junction transistor (BJT), an insulated gate bipolar transistor (IGBT), an N-channel metal-oxide-semiconductor field effect transistor (MOSFET), and a P-type MOS controlled thyristor (MCT). Using the results of these measurements, power supplies have been built using IGBTs and MOSFETs and operated at an ambient temperature of 200 degrees C for up to 72 h.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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