B.L. Draper

Challenges in hardening technologies using shallow-trench isolation

M.R. Shaneyfelt, P.E. Dodd, B.L. Draper et al. · IEEE Transactions on Nuclear Science · 1998 · 245 citations

Engineering, Electrical Engineering, Radiation Dosimetry +14

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

P.E. Dodd, A.R. Shaneyfelt, K.M. Horn et al. · IEEE Transactions on Nuclear Science · 2001 · 186 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of technology trends on SEU in CMOS SRAMs

P.E. Dodd, F.W. Sexton, G.L. Hash et al. · IEEE Transactions on Nuclear Science · 1996 · 126 citations

Engineering, Computer Engineering, Electrical Engineering +17

Accounting for Dose-Enhancement Effects with CMOS Transistors

Daniel M. Fleetwood, P.S. Winokur, R. W. Beegle et al. · IEEE Transactions on Nuclear Science · 1985 · 80 citations

Engineering, Computer Engineering, Electrical Engineering +17

Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides

Daniel M. Fleetwood, D.E. Beutler, L.J. Lorence et al. · IEEE Transactions on Nuclear Science · 1988 · 77 citations

Engineering, Electrical Engineering, Materials Science +17