G.L. Hash

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

P.E. Dodd, A.R. Shaneyfelt, K.M. Horn et al. · IEEE Transactions on Nuclear Science · 2001 · 186 citations

Engineering, Computer Engineering, Electrical Engineering +17

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 1998 · 135 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of technology trends on SEU in CMOS SRAMs

P.E. Dodd, F.W. Sexton, G.L. Hash et al. · IEEE Transactions on Nuclear Science · 1996 · 126 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

P.E. Dodd, J.R. Schwank, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 2007 · 123 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16

Single event gate rupture in thin gate oxides

F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 1997 · 122 citations

Engineering, Electrical Engineering, Materials Science +17