L. J. Palkuti - Concepedia

Author

L. J. Palkuti

United States Naval Research Laboratory

Also Known As

L. J. Palkuti, L. Palkuti, L.J. Palkuti, Les Palkuti

Publications

186

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Naval Research Laboratory Electronics Science and Technology Division Advanced Applications (United States)

About

L. J. Palkuti is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	132
2	Applied Physics	6	6	105
3	Electrical Engineering	3	3	55
4	Medicine	1	1	15
5	Materials Engineering	1	1	19

L. J. Palkuti

Publications

144

Citations

H-Index

Page 1

	Year	Citations
Integrated Circuit Characteristics at 260°C for Aircraft Engine-Control Applications L. J. Palkuti, J.L. Prince, Andrew S. Glista IEEE Transactions on Components Hybrids and Manufacturing Technology Room TemperatureElectrical EngineeringElectronic DevicesEngineeringCircuit System	1979	27
Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing T. J. Magee, L. J. Palkuti, R. Ormond, Applied Physics Letters Materials ScienceCw Laser AnnealingEpitaxial GrowthSingle-crystal Si SheetsEngineering	1981	23
A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped silicon D. J. Godbey, H.L. Hughes, Francis J. Kub, Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductor DeviceEngineeringDislocation Interaction	1990	19
Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si T. J. Magee, C. Leung, H. Kawayoshi, Applied Physics Letters Materials ScienceThrough-oxide Arsenic-implanted SiIon ImplantationEngineeringCrystalline Defects	1981	18
Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop D. J. Godbey, M. E. Twigg, H.L. Hughes, Journal of The Electrochemical Society Materials ScienceEpitaxial GrowthEngineeringElectronic MaterialsStrained Si0.7ge0.3 Layer	1990	17
Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices L. J. Palkuti, R. Ormond, Chenming Hu, IEEE Transactions on Nuclear Science EngineeringSemiconductor DeviceMos DevicesInduced DegradationNanoelectronics	1989	15
Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices D.H. Huang, E. E. King, J.J. Wang, IEEE Transactions on Nuclear Science Channel Hot-electron DegradationElectrical EngineeringEngineeringPhysicsRadiation Test	1991	13
The role of radiation effects in SOI technology development L. J. Palkuti, Michael L. Alles, H.L. Hughes	2014	12

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