M. E. Twigg

A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly

Igor L. Medintz, J. H. Konnert, Aaron R. Clapp et al. · Proceedings of the National Academy of Sciences · 2004 · 277 citations · Full text

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2002 · 267 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +7

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2001 · 228 citations

Wide-bandgap Semiconductor, Chemical Engineering, Engineering +8

Enhanced GaN decomposition in H2 near atmospheric pressures

Daniel Koleske, A. E. Wickenden, R.L. Henry et al. · Applied Physics Letters · 1998 · 79 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +11

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

M. A. Mastro, Charles R. Eddy, D. Kurt Gaskill et al. · Journal of Crystal Growth · 2005 · 48 citations

Materials Engineering, Materials Science, Aluminium Nitride +7