M. A. Mastro - Concepedia

Author

M. A. Mastro

United States Naval Research Laboratory

Also Known As

M. A. Mastro, M. Mastro, M.A. Mastro, MA Mastro

Publications

469

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory University of Florida Sest (United States)Technology Dynamics (United States)Ohio Aerospace Institute

About

M. A. Mastro is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	380
2	Applied Physics	11	12	380
3	Electrical Engineering	5	5	131
4	Natural Sciences	1	1	27
5	Chemistry	1	1	33

M. A. Mastro

Publications

419

Citations

H-Index

Page 1

	Year	Citations
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy Neeraj Nepal, S. B. Qadri, Jennifer K. Hite, Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideMaterial AnalysisEngineering	2013	58
Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging Yoosuf N. Picard, Joshua D. Caldwell, M. E. Twigg, Applied Physics Letters Materials ScienceContrast ImagingDislocation DensitiesWide-bandgap SemiconductorEngineering	2007	55
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates M. A. Mastro, Charles R. Eddy, D. Kurt Gaskill, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideWide-bandgap SemiconductorAlgan Superlattice Structures	2005	48
Influence of polarity on GaN thermal stability M. A. Mastro, O. Kryliouk, Timothy J. Anderson, Journal of Crystal Growth Electrical EngineeringGan Thermal StabilityEngineeringApplied PhysicsGan Power Device	2004	42
Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates M.D. Reed, O. Kryliouk, M. A. Mastro, Journal of Crystal Growth Materials ScienceSingle-crystalline GalliumEngineeringApplied PhysicsAluminum Gallium Nitride	2004	33
Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2 M. A. Mastro, O. Kryliouk, M.D. Reed, physica status solidi (a) Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2001	33
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates M. A. Mastro, R. T. Holm, Nabil Bassim, Applied Physics Letters	2005	29
Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy Hye‐Yun Park, C. Park, Seungeun Yeo, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineeringPhysics	2005	27
Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors M. A. Mastro, D. Tsvetkov, V. Soukhoveev, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2003	24
Indium‐free violet LEDs grown by HVPE A. Usikov, D. Tsvetkov, M. A. Mastro, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsIndium‐free Violet Leds	2003	19

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