Applied Physics Letters · 2007 · 55 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceDislocations In SemiconductorsElectron MicroscopySemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsTransmission Electron MicroscopyDislocation CharacterizationDislocation DensityDislocationsEdge DislocationsGallium Nitride (Gan) MaterialsNondestructive AnalysisThreading DislocationsTransmission Electron Microscopy Of Dislocations
Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged nondestructively by the electron channeling contrast imaging (ECCI) technique. Comparisons between ECCI and cross-sectional transmission electron microscopy indicated that pure edge dislocations can be imaged in GaN by ECCI. Total threading dislocation densities were measured by ECCI for various GaN films on engineered 4H-SiC surfaces and ranged from 107to109cm−2. A comparison between the ultraviolet electroluminescent output measured at 380nm and the total dislocation density as measured by ECCI revealed an inverse logarithmic dependence.
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S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations
Natural Sciences, Materials Engineering, Materials Science +17
Characterization of threading dislocations in GaN epitaxial layers
T. Hino, Shigetaka Tomiya, T. Miyajima et al. · Applied Physics Letters · 2000 · 400 citations
J. Y. Tsao · IEEE Circuits and Devices Magazine · 2004 · 383 citations