Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si

Abstract

The redistribution of recoil oxygen implants produced by the implantation of As ions through oxide layers on Si substrates has been investigated at annealing temperatures in the range 4000–1000 °C. Using transmission electron microscopy and secondary ion mass spectrometry profiling, it has been shown that the implanted (recoil) oxygen is rapidly gettered into residual damage structure at anneal temperatures < 900 °C. At temperatures ⩾ 1000 °C residual damage gettering sites are annihilated, releasing oxygen to migrate toward the Si surface. At the higher-annealing temperatures, oxygen has been shown to outdiffuse rapidly into the overlying (1000 Å) oxide layer on the sample surface.