Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing

Abstract

Single-crystal Si sheets (0.2 μm in thickness) of (100) orientation and of maximum dimensions, 100×10 000 μm, have been recrystallized by cw laser annealing of poly crystalline Si films deposited over parallel 3-μm-wide SiO2 bars adjacent to 3-μm Si (100) substrate openings. The recrystallized films are free of cracks, mosaic structure, stacking faults, or excessive mass flow at the oxide edges. In a correlated series of experiments we have shown that the Si can be recrystallized over the SiO2 with only limited or relaxed requirements for vertical seeding from the substrate window.