Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

Abstract

Bond and etch‐back silicon on insulator was fabricated using a strain‐selective etch and a novel etch stop consisting of a strained layer deposited by molecular beam epitaxy. The process was used to fabricate a 200–350 nm silicon layer on insulator. A 350‐nm silicon film on insulator fabricated by this technique was very lightly p‐type with a carrier density of less than 1015 cm−3.