Maximum Junction Temperatures of SiC Power Devices

Abstract

This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C, regardless of the device size and the cooling method used.