High temperature characterization of SiC BJTs for power switching applications

1800 V NPN bipolar junction transistors in 4H-SiC

Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

1000-V, 30-A 4H-SiC BJTs with high current gain

Sumi Krishnaswami, Anant Agarwal, Sei‐Hyung Ryu et al. · IEEE Electron Device Letters · 2005 · 84 citations

Engineering, Electrical Engineering, Materials Science +15

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

S. Balachandran, T. Paul Chow, Anant Agarwal et al. · IEEE Electron Device Letters · 2005 · 33 citations

Engineering, Electrical Engineering, Materials Science +15

Thermal stability of IGBT high-frequency operation

Kun Sheng, S.J. Finney, B.W. Williams · IEEE Transactions on Industrial Electronics · 2000 · 31 citations

Engineering, Electrical Engineering, Microelectronics +16

4H-SiC npn bipolar junction transistors with BV/sub CEO/ < 3,200 V

Chih‐Fang Huang, James A. Cooper · 2003 · 25 citations

Engineering, Electrical Engineering, Materials Science +12