S. Balachandran

1000-V, 30-A 4H-SiC BJTs with high current gain

Sumi Krishnaswami, Anant Agarwal, Sei‐Hyung Ryu et al. · IEEE Electron Device Letters · 2005 · 84 citations

Electrical Engineering, Engineering, Bipolar Junction Transistor +8

Physical and mechanical metallurgy of high purity Nb for accelerator cavities

Thomas R. Bieler, Nathan T. Wright, Farhang Pourboghrat et al. · Physical Review Special Topics - Accelerators and Beams · 2010 · 48 citations · Full text

Superconducting Material, Engineering, Radio Frequency +17

Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Michael R. Jennings, Amador Pérez‐Tomás, Mark W. Davies et al. · Solid-State Electronics · 2007 · 40 citations

Materials Science, Triple Layer Contacts, Electrical Engineering +8

Effect of low temperature baking in nitrogen on the performance of a niobium superconducting radio frequency cavity

Pashupati Dhakal, Santosh Chetri, S. Balachandran et al. · Physical Review Accelerators and Beams · 2018 · 40 citations · Full text

Low Temperature Baking, Superconducting Material, Electrical Engineering +14

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

S. Balachandran, T. Paul Chow, Anant Agarwal et al. · IEEE Electron Device Letters · 2005 · 33 citations

Electrical Engineering, Engineering, Power Device +9