New Unipolar Switching Power Device Figures of Merit

Abstract

Several new unipolar switching power device figures of merit are proposed based on proper consideration of power device conduction and switching losses. These figures of merit can be used for device and material comparison. The relative advantages of different semiconductor materials are then compared. Using the new figures of merit, the predicted advantages of power devices based on wide-bandgap materials are less than those predicted by other published figures of merits.