Karine Isoird

Thick boron doped diamond single crystals for high power electronics

Jocelyn Achard, François Silva, Riadh Issaoui et al. · Diamond and Related Materials · 2010 · 85 citations

Thick Boron, Diamond-like Carbon, Electrical Engineering +5

Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements

Christophe Raynaud, Karine Isoird, M. Lazar et al. · Journal of Applied Physics · 2002 · 58 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Loïc Théolier, H. Mahfoz-Kotb, Karine Isoird et al. · IEEE Electron Device Letters · 2009 · 46 citations

New Junction Termination, Electrical Engineering, Engineering +8

An assessment of contact metallization for high power and high temperature diamond Schottky devices

Sodjan Koné, H. Schneider, Karine Isoird et al. · Diamond and Related Materials · 2012 · 38 citations · Full text

Materials Science, Diamond-like Carbon, Engineering +8

Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces

Elias Al Alam, Marie‐Paule Besland, A. Goullet et al. · Journal of Applied Physics · 2011 · 36 citations · Full text

Engineering, Semiconductors, Surface Preparation +16