Riadh Issaoui - Concepedia

Author

Riadh Issaoui

Centre National de la Recherche Scientifique ORCID

Also Known As

Issaoui, R., Issaoui, Riadh, R. Issaoui, Riadh Issaoui

Publications

728

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Sorbonne Paris Nord Université Paris Cité Groupe d’Étude de la Matière Condensée Laboratoire des Sciences des Procédés et des Matériaux

About

Riadh Issaoui is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	20	677
2	Applied Physics	17	19	663
3	Electrical Engineering	9	9	321
4	Materials Engineering	8	8	228
5	Chemistry	2	2	62

Riadh Issaoui

Publications

688

Citations

H-Index

Page 1

	Year	Citations
Thick boron doped diamond single crystals for high power electronics Jocelyn Achard, François Silva, Riadh Issaoui, Diamond and Related Materials Thick BoronDiamond-like CarbonElectrical EngineeringBoron NitrideEngineering	2010	85
Identification of etch‐pit crystallographic faces induced on diamond surface by H<sub>2</sub>/O<sub>2</sub> etching plasma treatment Jocelyn Achard, François Silva, Ovidiu Brinza, physica status solidi (a) Materials ScienceDiamond-like CarbonEngineeringDislocation InteractionCrystalline Defects	2009	66
Boron acceptor concentration in diamond from excitonic recombination intensities Julien Barjon, Thomas Tillocher, Nada Habka, Physical Review B Materials ScienceDiamond-like CarbonBoron NitridePhotoluminescenceEngineering	2011	50
Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices M.A. Pinault-Thaury, Solange Temgoua, Rémi Gillet, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	2019	48
Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices? Jocelyn Achard, Riadh Issaoui, Alexandre Tallaire, physica status solidi (a) EngineeringCubic Boron NitrideSemiconductor DeviceSemiconductorsBoron Nitride	2012	43
Homoepitaxial boron‐doped diamond with very low compensation Julien Barjon, E. Chikoidze, François Jomard, physica status solidi (a) Materials ScienceSemiconductorsBoron AcceptorsDiamond-like CarbonEngineering	2012	42
Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density Riadh Issaoui, Jocelyn Achard, François Silva, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringDiamond-like CarbonEngineering	2010	41
An assessment of contact metallization for high power and high temperature diamond Schottky devices Sodjan Koné, H. Schneider, Karine Isoird, Diamond and Related Materials Materials ScienceDiamond-like CarbonEngineeringPowder MetallurgyNanoelectronics	2012	38
Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond Alexandre Tallaire, Julien Barjon, Ovidiu Brinza, Diamond and Related Materials Materials EngineeringMaterials ScienceEngineeringDislocation InteractionEpitaxial Growth Resumption	2011	36
Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices Riadh Issaoui, Jocelyn Achard, Alexandre Tallaire, Applied Physics Letters EngineeringBoropheneBoron NitrideElectronic DevicesHexagonal Boron Nitride	2012	33

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