Concepedia

Riadh Issaoui

RI

21

Publications

688

Citations

17

H-Index

2009

Active since

Affiliations

Centre National de la Recherche Scientifique(Current)

Université Sorbonne Paris Nord

Université Paris Cité

Groupe d’Étude de la Matière Condensée

Laboratoire des Sciences des Procédés et des Matériaux

Riadh Issaoui is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceCrystalline DefectsElectrical EngineeringMaterials EngineeringCondensed Matter PhysicsPhysicsSemiconductorsMicroelectronics

Publications per year

2009–2022

21

Publications

21

Thick boron doped diamond single crystals for high power electronics

Jocelyn Achard, François Silva, Riadh Issaoui et al. · Diamond and Related Materials · 2010 · 85 citations

Thick Boron, Diamond-like Carbon, Electrical Engineering +5

Identification of etch‐pit crystallographic faces induced on diamond surface by H<sub>2</sub>/O<sub>2</sub> etching plasma treatment

Jocelyn Achard, François Silva, Ovidiu Brinza et al. · physica status solidi (a) · 2009 · 66 citations

Materials Science, Diamond-like Carbon, Engineering +14

Boron acceptor concentration in diamond from excitonic recombination intensities

Julien Barjon, Thomas Tillocher, Nada Habka et al. · Physical Review B · 2011 · 50 citations

Materials Science, Diamond-like Carbon, Boron Nitride +12

Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

M.A. Pinault-Thaury, Solange Temgoua, Rémi Gillet et al. · Applied Physics Letters · 2019 · 48 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +13

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Jocelyn Achard, Riadh Issaoui, Alexandre Tallaire et al. · physica status solidi (a) · 2012 · 43 citations

Engineering, Cubic Boron Nitride, Semiconductor Device +19

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