M. Lazar

Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements

Christophe Raynaud, Karine Isoird, M. Lazar et al. · Journal of Applied Physics · 2002 · 58 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

D. Szalkai, R. Ferone, F. Issa et al. · IEEE Transactions on Nuclear Science · 2016 · 41 citations

Fast Neutron Detection, Nuclear Physics, Fast Neutrons +23

The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

Farah Laariedh, M. Lazar, Pierre Crémillieu et al. · Semiconductor Science and Technology · 2013 · 36 citations · Full text

Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

F. Issa, V. Vervisch, L. Ottaviani et al. · IEEE Transactions on Nuclear Science · 2014 · 25 citations

Engineering, Nuclear Physics, Nuclear Data +23

Experimental determination of impact ionization coefficients in 4H-SiC

Dao Nguyen, C. Raynaud, Nolwenn M. Dheilly et al. · Diamond and Related Materials · 2011 · 20 citations

Ion Implantation, Electrical Engineering, Engineering +3