Transient Turn-ON Characteristics of the Fin p-Body IGBT

Abstract

In this paper, the transient turn-ON performance of the 1200 V-class fin p-body insulated gate bipolar transistor (Fin-p IGBT) is numerically analyzed and experimentally characterized. Analysis shows that the gate self-charging effect at the turn-ON transient of the device can effectively be suppressed due to its unique structural features of wide trenches and spacer gates. As a result, the Fin-p IGBT demonstrates excellent controllability on the turn-ON dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</sub> /dt of the IGBT, and hence the reverse-recovery dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">KA</sub> /dt of the free-wheeling diode. Compared with conventional floating p-body IGBTs, the Fin-p IGBT can achieve a significant reduction (up to 82%) in the reverse-recovery dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">KA</sub> /dt, which is of great merit in suppressing the electromagnetic interference noise. Moreover, the turn-ON energy loss of the Fin-p IGBT can be reduced by 53% compared with that of the conventional one at the same reverse-recovery dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">KA</sub> /dt of 10 kV/μs.