2003 · 65 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsElectronics TechnologyMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesBreakdown VoltageGate Dielectric EngineeringGate DielectricsJunction Leakage CurrentLeakageLeakage Current ReductionPunch-throughSwitching Loss Reduction
In order to improve the total performance of nonpunch-through (NPT) type trench IGBT for the 1200/spl sim/1700 V region, a triple combination of concepts is adopted: "wide cell pitch" and "carrier stored trench-gate bipolar transistor (CSTBT)" for the emitter side, and "light punch-through (LPT)" structure for the collector side. The wide cell pitch LPT-CSTBT demonstrates lower on-state voltage, lower switching loss, lower junction leakage current than that of conventional NPT trench IGBT, and relatively large short circuit capability. In addition, our device shows excellent gate dielectric reliability by utilizing CVD gate oxide film. The LPT-CSTBT with CVD gate dielectric is a promising candidate for high voltage power devices, because its performance is approaches that of punch-through (PT) trench IGBTs.
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1200 V-trench-IGBT study with square short circuit SOA
T. Laska, F. Pfirsch, F. Hirler et al. · 2002 · 51 citations
Engineering, Electrical Engineering, Electronic Materials +13
Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness
Hiroki Nakamura, K. Nakamura, S. Kusunoki et al. · 2002 · 22 citations